Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers
Identifieur interne : 011B43 ( Main/Repository ); précédent : 011B42; suivant : 011B44Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers
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Abstract
We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well (MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers</title><author><name sortKey="Zhang, Jianping" uniqKey="Zhang J">Jianping Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of South Carolina, Department of Electrical Engineering, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>University of South Carolina, Department of Electrical Engineering, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J" uniqKey="Yang J">J. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of South Carolina, Department of Electrical Engineering, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>University of South Carolina, Department of Electrical Engineering, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Simin, G" uniqKey="Simin G">G. Simin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of South Carolina, Department of Electrical Engineering, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>University of South Carolina, Department of Electrical Engineering, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Shatalov, M" uniqKey="Shatalov M">M. Shatalov</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of South Carolina, Department of Electrical Engineering, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>University of South Carolina, Department of Electrical Engineering, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Khan, M Asif" uniqKey="Khan M">M. Asif Khan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of South Carolina, Department of Electrical Engineering, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>University of South Carolina, Department of Electrical Engineering, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Shur, M S" uniqKey="Shur M">M. S. Shur</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham</wicri:cityArea></affiliation></author><author><name sortKey="Gaska, R" uniqKey="Gaska R">R. Gaska</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0451329</idno><date when="2000-10-23">2000-10-23</date><idno type="stanalyst">PASCAL 00-0451329 AIP</idno><idno type="RBID">Pascal:00-0451329</idno><idno type="wicri:Area/Main/Corpus">012510</idno><idno type="wicri:Area/Main/Repository">011B43</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Line intensity</term><term>Localized states</term><term>Photoluminescence</term><term>Semiconductor quantum wells</term><term>Spectral shift</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7855C</term><term>6865</term><term>7320D</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Photoluminescence</term><term>Etat localisé</term><term>Déplacement spectral</term><term>Intensité raie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well (MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>77</s2></fA05><fA06><s2>17</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (Jianping)</s1></fA11><fA11 i1="02" i2="1"><s1>YANG (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>SIMIN (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>SHATALOV (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>KHAN (M. Asif)</s1></fA11><fA11 i1="06" i2="1"><s1>SHUR (M. S.)</s1></fA11><fA11 i1="07" i2="1"><s1>GASKA (R.)</s1></fA11><fA14 i1="01"><s1>University of South Carolina, Department of Electrical Engineering, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>2668-2670</s1></fA20><fA21><s1>2000-10-23</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0451329</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well (MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. 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